By Tho T. Vu
This is often the booklet model of a different factor of the "International magazine of excessive pace Electronics and Systems", reviewing contemporary paintings within the box of compound semiconductor built-in circuits. There are 14 invited papers protecting quite a lot of purposes, frequencies and fabrics. those papers care for electronic, analog, microwave and millimeter-wave applied sciences, units and built-in circuits for wireline fiber-optic lightwave transmissions, and instant radio-frequency microwave and millimeter-wave communications. In each one case, the industry is younger and experiencing fast progress for either advertisement and millitary functions. Many new semiconductor applied sciences compete for those new markets, resulting in an alphabet soup of semiconductor fabrics defined in those papers. The booklet additionally comprises 3 papers excited by radiation results and reliability in III-V semiconductor electronics, that are worthy for reference and destiny instructions. in addition, reliability is roofed in different papers individually for sure procedure applied sciences.
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Extra resources for Compound Semiconductor Integrated Circuits (Selected Topics in Electronics and Systems, V. 29)
As the unit finger width is scaled down, fringing capacitance becomes dominant for all technologies degrading both fMAx (in the case of III-V FETs) as well as fT in the extreme case of very narrow gates. For Si MOSFETs, the polysilicon gate resistance, several orders of magnitude larger than the metal gate resistance of III-V HEMTs, is the dominant factor in fMAx degradation [14-15]. 09 \im and beyond. With shrinking device dimensions, accurately predicting in simulation the fT(Ic) characteristics for a wide range of V C E/V D S, values, as well as for different device geometries (gate width and emitter length, respectively) becomes even more critical.
It operates in linear mode and has a bandwidth greater than 8 GHz over all process, supply and temperature corners. The limiting amplifier stages consist of differential inverters with optional three-terminal inductor peaking and emitter followers. The CAZ1 pad can also be used to externally adjust the slicing level  at the input of the limiting amplifier between 20% and 80% of the eye height. The LOS block features a hysteresis comparator with low-voltage TTL outputs. The threshold of the LOS circuit is adjustable via an external potentiometer placed between the VREF, VSET and GND pads.
Yamaguchi, "Very-high-speed Si bipolar static frequency-divier with new T-type flip-flops," IEEE J. Solid-State Circuits 30 (1995) 19-24. B. Tang, J. Northoff, A. Gutierres-Aitken, E. Kaneshiro and P. Chin, "InP DHBT 68 GHz frequency divider," in Tech. Dig. , 1999, pp. 193-196. T. Suzuki, H. Kano, Y. Nakasha, T. Takahashi, K. Imanishi, H. Ohnishi and Y. Watanabe, "40-Gbit/s D-type flip-flop and multiplexer circuits using InP HEMT," in Dig. IEEE MTT-S Int. , 2001, pp. TUIF-50-1-4. M. Sokolich, G.
Compound Semiconductor Integrated Circuits (Selected Topics in Electronics and Systems, V. 29) by Tho T. Vu