Read e-book online Circuit Design for Reliability PDF

ISBN-10: 1461440777

ISBN-13: 9781461440772

This e-book provides actual figuring out, modeling and simulation, on-chip characterization, format ideas, and layout recommendations which are powerful to augment the reliability of assorted circuit devices. The authors supply readers with concepts for state-of-the-art and destiny applied sciences, starting from expertise modeling, fault detection and research, circuit hardening, and reliability administration.

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R da Silva, G Wirth and L Brusamarello. “An appropriate model for the noise power spectrum produced by traps at the Si SiO interface: a study of the influence of a time-dependent Fermi level. Journal of Statistical Mechanics” Journal of Statistical Mechanics. Theory and Experiment, 2008, p. P10015 (2008). 6. R Brederlow, J Koh, G Wirth, R da Silva, M Tiebout, R Thewes. “Low Frequency Noise Considerations for CMOS Analog Circuit Design” Proceedings of the 2005 International Conf on Noise and Fluctuations (ICNF).

Although reaction diffusion models have been very useful and successful, some aspects of NBTI are difficult to be fully explained in a reaction diffusion framework, as for instance the fast recovery which occurs if bias stress is removed [20]. Other 3 Charge Trapping Phenomena in MOSFETS: From Noise to Bias. . 37 phenomena, such as charge trapping, therefore have to be also considered in the NBTI mechanism [22, 23]. Clear steps caused by single trapping or de-trapping events were seen in experimental works, showing the discrete nature of VT shifts, [22–24].

The noise power S is evaluated according to Eq. 17), considering the U-shaped trap density given by Eq. 18). The same parameter a D 11 is used in all figures and evaluations performed in this work. Note that the noise reduction is larger if the biasing levels are symmetrical in relation to the center of the U-shaped trap density 3 Charge Trapping Phenomena in MOSFETS: From Noise to Bias. . 33 It can be seen that a higher noise reduction can be expected if the biasing levels are symmetrical in relation to the center of the U-shaped trap density.

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Circuit Design for Reliability


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