Download e-book for iPad: 2D materials for nanoelectronics by Michel Houssa, Athanasios Dimoulas, Alessandro Molle

By Michel Houssa, Athanasios Dimoulas, Alessandro Molle

ISBN-10: 1498704182

ISBN-13: 9781498704182

"Major advancements within the semiconductor are at the horizon by using 2nd fabrics comparable to graphene and transition steel dichalcogenides for built-in circuits. This publication offers the 1st finished therapy of the sphere with an emphasis on purposes in nanoelectronic units. Chapters are divided by way of the 3 significant households of such fabrics, overlaying graphene for analog and photonic Read more...

summary: "Major advancements within the semiconductor are at the horizon by using second fabrics resembling graphene and transition steel dichalcogenides for built-in circuits. This e-book offers the 1st complete remedy of the sphere with an emphasis on purposes in nanoelectronic units. Chapters are divided by means of the 3 significant households of such fabrics, protecting graphene for analog and photonic functions, MoS2 (molybdenum disulfide) for common sense purposes and novel fabrics akin to silicene, germanene, stanene and phosphorene"

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2, 620, 2006. 19. E. Fradkin, Phys. Rev. B 33, 3263, 1986. 20. E. V. Gorbar, V. P. Gusynin, V. A. Miransky and I. A. Shovkovy, Phys. Rev. B 66, 045108, 2002. 21. M. I. Katsnelson, Eur. Phys. J. B 57, 225, 2007. 22. J. Tworzydlo, B. Trauzettel, M. Titov, A. Rycerz and C. W. J. Beenakker, Phys. Rev. Lett. 96, 246802, 2006. 23. K. Ziegler, Phys. Rev. Lett. 80, 3113, 1998. 24. P. M. Ostrovsky, I. V. Gornyi and A. D. Mirlin, Phys. Rev. B 74, 235443, 2006. 25. J. H. Chen, C. Jang, S. Xiao, M. Ishigami and M.

F. Crommie, Science 329, 544, 2010. 52. E. Stolyarova, D. Stolyarov, K. Bolotin, S. Ryu, L. Liu, K. T. Rim, M. Klima et al. Nano Lett. 9, 332, 2008. 53. T. Georgiou, L. Britnell, P. Blake, R. V. Gorbachev, A. Gholinia, A. K. Geim, C. Casiraghi and K. S. Novoselov, Appl. Phys. Lett. 99, 093103, 2011. 54. M. Ramezani Masir, D. Moldovan and F. M. Peeters, Solid State Commun. 76, 175–176, 2013. 1 Introduction...................................................................................................

29) With NNN interactions included and using the fact that s ≈ 0, we obtain ε k ≈ ε pz + αt 3 + f (k ) + t ′f (k ). 2t for the NNNhopping parameter. 7) touch each other in the Dirac points K (K′) given by the roots of the energy dispersion ϵk = 0. The valence band is completely filled and the conduction band is completely empty due to the fact that only one electron (with spin up or spin down) of each carbon atom contributes to the π band. When t′ = 0, the energy dispersion has electron–hole symmetry ε αk = − ε −k α .

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2D materials for nanoelectronics by Michel Houssa, Athanasios Dimoulas, Alessandro Molle


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